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Model IRFS59N10DTRLP
Description 单 P沟道 -12 V 1.3 W 10 nC 功率Mosfet 表面贴装 - MICRO-3
Product QR code
Brand: Infineon
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
7.22  yuan 7.22yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(1307) Minimum order quantity(1)
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Technical parameters/polarity:

N-CH

 

Technical parameters/dissipated power:

3.8 W

 

Technical parameters/drain source voltage (Vds):

100 V

 

Technical parameters/Continuous drain current (Ids):

59A

 

Technical parameters/rise time:

90 ns

 

Technical parameters/Input capacitance (Ciss):

2450pF @25V(Vds)

 

Technical parameters/descent time:

12 ns

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

3.8W (Ta), 200W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

TO-263-3

 

Dimensions/Length:

6.5 mm

 

Dimensions/Width:

6.22 mm

 

Dimensions/Height:

2.3 mm

 

Dimensions/Packaging:

TO-263-3

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRFS59N10D IRFS59N10D Infineon 类似代替 D2PAK-263
D2PAK N-CH 100V 59A
PDF
IRFS59N10DPBF IRFS59N10DPBF Infineon 类似代替 TO-263-3
INFINEON IRFS59N10DPBF 晶体管, MOSFET, N沟道, 59 A, 100 V, 25 mohm, 10 V, 5.5 V
STB35NF10T4 STB35NF10T4 ST Microelectronics 功能相似 TO-263-3
N 通道 STripFET™，STMicroelectronics ### MOSFET 晶体管，STMicroelectronics
PDF
STB40NF10LT4 STB40NF10LT4 ST Microelectronics 功能相似 TO-263-3
STMICROELECTRONICS STB40NF10LT4 晶体管, MOSFET, N沟道, 40 A, 100 V, 0.028 ohm, 10 V, 1.7 V
PDF

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