Technical parameters/minimum current amplification factor (hFE): | 70 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 1.2 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-223 |
|
Dimensions/Length: | 6.55 mm |
|
Dimensions/Width: | 3.55 mm |
|
Dimensions/Height: | 1.65 mm |
|
Dimensions/Packaging: | SOT-223 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NSS60600MZ4T1G
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON SEMICONDUCTOR NSS60600MZ4T1G 单晶体管 双极, PNP, -60 V, 100 MHz, 2 W, -6 A, 150 hFE
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review