Technical parameters/frequency: | 300 MHz |
|
Technical parameters/number of pins: | 3 |
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Technical parameters/polarity: | NPN |
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Technical parameters/dissipated power: | 150 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 40 V |
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Technical parameters/Maximum allowable collector current: | 0.2A |
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Technical parameters/minimum current amplification factor (hFE): | 100 @10mA, 1V |
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Technical parameters/maximum current amplification factor (hFE): | 300 |
|
Technical parameters/rated power (Max): | 150 mW |
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Technical parameters/DC current gain (hFE): | 30 |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 150 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SC-70-3 |
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Dimensions/Packaging: | SC-70-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N3904RL1G
|
ON Semiconductor | 功能相似 | TO-226-3 |
通用晶体管NPN硅 General Purpose Transistors NPN Silicon
|
||
MMBT3904WT1G
|
ON Semiconductor | 类似代替 | SC-70-3 |
ON SEMICONDUCTOR MMBT3904WT1G 单晶体管 双极, 通用, NPN, 40 V, 300 MHz, 150 mW, 200 mA, 300 hFE
|
||
SMMBT3904LT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR SMMBT3904LT1G 新
|
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