Technical parameters/drain source voltage (Vds): | 900 V |
|
Technical parameters/Input capacitance (Ciss): | 2730pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 280 W |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-3-3 |
|
Dimensions/Packaging: | TO-3-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FQA9N90C_F109
|
ON Semiconductor | 功能相似 | TO-3 |
ON Semiconductor QFET 系列 Si N沟道 MOSFET FQA9N90C_F109, 9 A, Vds=900 V, 3引脚 TO-3PN封装
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review