Technical parameters/number of channels: | 1 |
|
Technical parameters/number of pins: | 3 |
|
Technical parameters/drain source resistance: | 0.155 Ω |
|
Technical parameters/polarity: | P-CH |
|
Technical parameters/dissipated power: | 0.4 W |
|
Technical parameters/threshold voltage: | 3 V |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Continuous drain current (Ids): | 1.13A |
|
Technical parameters/rise time: | 12 ns |
|
Technical parameters/Input capacitance (Ciss): | 200pF @15V(Vds) |
|
Technical parameters/rated power (Max): | 400 W |
|
Technical parameters/descent time: | 17.5 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 400 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Packaging: | SOT-23-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI2303CDS-T1-GE3
|
Vishay Dale | 功能相似 |
P通道30 -V （D -S ）的MOSFET P-Channel 30-V (D-S) MOSFET
|
|||
SI2303CDS-T1-GE3
|
Vishay Intertechnology | 功能相似 |
P通道30 -V （D -S ）的MOSFET P-Channel 30-V (D-S) MOSFET
|
|||
SI2303CDS-T1-GE3
|
Vishay Siliconix | 功能相似 | SOT-23-3 |
P通道30 -V （D -S ）的MOSFET P-Channel 30-V (D-S) MOSFET
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review