Technical parameters/number of channels: | 1 |
|
Technical parameters/number of pins: | 8 |
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Technical parameters/drain source resistance: | 0.015 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 2 W |
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Technical parameters/threshold voltage: | 3 V |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | 6.40 A |
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Technical parameters/rise time: | 4 ns |
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Technical parameters/Input capacitance (Ciss): | 940pF @15V(Vds) |
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Technical parameters/rated power (Max): | 750 mW |
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Technical parameters/descent time: | 6.5 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Width: | 4 mm |
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Dimensions/Height: | 1.5 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6612A
|
Fairchild | 类似代替 | SOIC-8 |
晶体管, MOSFET, N沟道, 8.4 A, 30 V, 0.019 ohm, 10 V, 1.9 V
|
||
FDS6612A
|
ON Semiconductor | 类似代替 | SOIC-8 |
晶体管, MOSFET, N沟道, 8.4 A, 30 V, 0.019 ohm, 10 V, 1.9 V
|
||
|
|
Rochester | 类似代替 | SOIC |
ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDS6630A, 6.5 A, Vds=30 V, 8引脚 SOIC封装
|
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