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Model CSD18536KTTT

Description TEXAS INSTRUMENTS CSD18536KTTT 晶体管, MOSFET, NexFET™, N沟道, 349 A, 60 V, 0.0013 ohm, 10 V, 1.8 V 新

Brand: TI

Packaging TO-263-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	0.0013 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	375 W
Technical parameters/threshold voltage:	1.8 V
Technical parameters/drain source voltage (Vds):	60 V
Technical parameters/Continuous drain current (Ids):	200A
Technical parameters/rise time:	5 ns
Technical parameters/Input capacitance (Ciss):	11430pF @30V(Vds)
Technical parameters/descent time:	4 ns
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	375W (Tc)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-263-3
Dimensions/Length:	9.25 mm
Dimensions/Height:	4.7 mm
Dimensions/Packaging:	TO-263-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-55℃ ~ 175℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:	Contains Lead
Compliant with standard/REACH SVHC version:	2015/06/15
Customs information/ECCN code:	EAR99