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Model CSD18536KTT
Description 60V、N 沟道 NexFET MOSFET™、单路、D2PAK、1.6mΩ 3-DDPAK/TO-263 -55 to 175
Product QR code
Brand: TI
Packaging TO-263-3
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
32.39  yuan 32.39yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3956) Minimum order quantity(1)
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Technical parameters/polarity:

N-CH

 

Technical parameters/dissipated power:

375 W

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/Continuous drain current (Ids):

200A

 

Technical parameters/rise time:

5 ns

 

Technical parameters/Input capacitance (Ciss):

11430pF @30V(Vds)

 

Technical parameters/descent time:

4 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

375W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

4

 

Encapsulation parameters/Encapsulation:

TO-263-3

 

Dimensions/Packaging:

TO-263-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Supply in progress

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
CSD18535KTT CSD18535KTT TI 类似代替 TO-263-3
60V、N 沟道 NexFET MOSFET™、单路、D2PAK、2mΩ 3-DDPAK/TO-263 -55 to 175
CSD19506KTT CSD19506KTT TI 类似代替 TO-263-3
80V、N 沟道 NexFET MOSFET™、单路、D2PAK、2.3mΩ 3-DDPAK/TO-263 -55 to 175

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