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Model RQ1E070RPTR
Description 晶体管, MOSFET, P沟道, -7 A, -30 V, 0.012 ohm, -10 V, -2.5 V
Product QR code
Brand: ROHM Semiconductor
Packaging TSMT-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.19  yuan 1.19yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9212) Minimum order quantity(1)
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Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.012 Ω

 

Technical parameters/polarity:

P-Channel

 

Technical parameters/dissipated power:

1.5 W

 

Technical parameters/threshold voltage:

2.5 V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Continuous drain current (Ids):

7A

 

Technical parameters/rise time:

35 ns

 

Technical parameters/Input capacitance (Ciss):

2700pF @10V(Vds)

 

Technical parameters/rated power (Max):

550 mW

 

Technical parameters/descent time:

70 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

550mW (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

TSMT-8

 

Dimensions/Packaging:

TSMT-8

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

150℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
DMG4435SSS-13 DMG4435SSS-13 Diodes 功能相似 SOIC-8
DMG4435SSS 系列 30 V 20 mOhm P 沟道 增强型 Mosfet - SOP-8
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