Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 45 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
|
Technical parameters/minimum current amplification factor (hFE): | 110 |
|
Technical parameters/maximum current amplification factor (hFE): | 220 |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-23 |
|
Dimensions/Packaging: | SOT-23 |
|
Other/Product Lifecycle: | Unknown |
|
Other/Minimum Packaging: | 3000 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ITT Corporation | 类似代替 | SOT-23 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
BC847A
|
Nexperia | 类似代替 | TO-236 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
|
|
Fairchild | 类似代替 | SOT-23 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
BC847A
|
CDIL | 类似代替 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
|||
|
|
Vishay Semiconductor | 类似代替 | SOT-23 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
BC847A
|
Taiwan Semiconductor | 类似代替 | SOT-23 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
BC847A
|
GMR Semiconductor | 类似代替 | SOT-23 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
BC847A
|
Panjit | 类似代替 | SOT-23 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
BC847A
|
Philips | 类似代替 | TO-236 |
Transistor: NPN; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
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