Technical parameters/rated voltage (DC): | 55.0 V |
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Technical parameters/rated current: | 75.0 A |
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Technical parameters/drain source resistance: | 12 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 130 W |
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Technical parameters/product series: | IRL3705Z |
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Technical parameters/Input capacitance: | 2880pF @25V |
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Technical parameters/drain source voltage (Vds): | 55 V |
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Technical parameters/Leakage source breakdown voltage: | 55.0 V |
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Technical parameters/Continuous drain current (Ids): | 75.0 A |
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Technical parameters/rise time: | 240 ns |
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Technical parameters/Input capacitance (Ciss): | 2880pF @25V(Vds) |
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Technical parameters/rated power (Max): | 130 W |
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Technical parameters/operating temperature (Max): | 175 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-220-3 |
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Dimensions/Length: | 10.66 mm |
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Dimensions/Height: | 9.02 mm |
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Dimensions/Packaging: | TO-220-3 |
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Physical parameters/operating temperature: | -55℃ ~ 175℃ |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STP60NF06L
|
ST Microelectronics | 功能相似 | TO-220-3 |
N 通道 STripFET™ II，STMicroelectronics STripFET™ MOSFET，带宽击穿电压范围，可提供超低栅极电话和低接通电阻。 ### MOSFET 晶体管，STMicroelectronics
|
||
STP80NF55-08
|
ST Microelectronics | 功能相似 | TO-220-3 |
STMICROELECTRONICS STP80NF55-08 晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 10 V, 3 V
|
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