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Model IRLB3036PBF
Description INFINEON IRLB3036PBF 晶体管, MOSFET, N沟道, 165 A, 60 V, 0.0019 ohm, 10 V, 2.5 V
Product QR code
Brand: Infineon
Packaging TO-220-3
Delivery time
Packaging method Tube
Standard packaging quantity 1
20.05  yuan 20.05yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(5244) Minimum order quantity(1)
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Technical parameters/rated power:

380 W

 

Technical parameters/number of channels:

1

 

Technical parameters/number of pins:

3

 

Technical parameters/drain source resistance:

0.0019 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

380 W

 

Technical parameters/threshold voltage:

2.5 V

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/Leakage source breakdown voltage:

60 V

 

Technical parameters/Continuous drain current (Ids):

270A

 

Technical parameters/rise time:

220 ns

 

Technical parameters/Input capacitance (Ciss):

11210pF @50V(Vds)

 

Technical parameters/rated power (Max):

380 W

 

Technical parameters/descent time:

110 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

380000 mW

 

Encapsulation parameters/installation method:

Through Hole

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-220-3

 

Dimensions/Length:

10.67 mm

 

Dimensions/Width:

4.83 mm

 

Dimensions/Height:

9.02 mm

 

Dimensions/Packaging:

TO-220-3

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tube

 

Other/Manufacturing Applications:

Consumer Electronics, Industrial, Consumer Full Bridge, Motor Drive& Control, Consumer Electron

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