Technical parameters/number of channels: | 1 |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 391W (Tc) |
|
Technical parameters/threshold voltage: | 3 V |
|
Technical parameters/drain source voltage (Vds): | 600 V |
|
Technical parameters/Continuous drain current (Ids): | 53A |
|
Technical parameters/rise time: | 12 ns |
|
Technical parameters/Input capacitance (Ciss): | 3800pF @100V(Vds) |
|
Technical parameters/rated power (Max): | 391 W |
|
Technical parameters/descent time: | 5 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 391W (Tc) |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-247-3 |
|
Dimensions/Length: | 16.13 mm |
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Dimensions/Width: | 5.21 mm |
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Dimensions/Height: | 21.1 mm |
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Dimensions/Packaging: | TO-247-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tube |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
|
Customs information/ECCN code: | EAR99 |
|
Customs Information/Hong Kong Import and Export License: | NLR |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
ON Semiconductor | 功能相似 | TO-247 |
FAIRCHILD SEMICONDUCTOR FCH47N60F_F133 功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.062 ohm, 10 V, 3 V
|
||
FCH47N60_F133
|
Fairchild | 功能相似 | TO-247-3 |
FAIRCHILD SEMICONDUCTOR FCH47N60_F133 功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.058 ohm, 10 V, 3 V
|
||
|
|
ON Semiconductor | 功能相似 | TO-247 |
FAIRCHILD SEMICONDUCTOR FCH47N60_F133 功率场效应管, MOSFET, N沟道, 47 A, 600 V, 0.058 ohm, 10 V, 3 V
|
||
STW55NM60ND
|
ST Microelectronics | 功能相似 | TO-247-3 |
STMICROELECTRONICS STW55NM60ND 功率场效应管, MOSFET, N沟道, 51 A, 600 V, 0.047 ohm, 10 V, 4 V
|
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