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Model CSD17578Q3A
Description CSD17578Q3A 30 V N 通道 NexFET™ 功率 MOSFET
Product QR code
Brand: TI
Packaging VSONP-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.12  yuan 1.12yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6244) Minimum order quantity(1)
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Technical parameters/polarity:

N-CH

 

Technical parameters/dissipated power:

2.5 W

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Continuous drain current (Ids):

20A

 

Technical parameters/rise time:

6 ns

 

Technical parameters/Input capacitance (Ciss):

1590pF @15V(Vds)

 

Technical parameters/descent time:

1 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

3.2W (Ta), 37W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

VSONP-8

 

Dimensions/Length:

3.15 mm

 

Dimensions/Width:

3 mm

 

Dimensions/Height:

0.9 mm

 

Dimensions/Packaging:

VSONP-8

 

Physical parameters/materials:

Silicon

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Supply in progress

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
CSD17578Q3AT CSD17578Q3AT TI 类似代替 VSONP-8
N 通道 NexFET™ 功率 MOSFET，Texas Instruments ### MOSFET 晶体管，Texas Instruments
RQ3E180BNTB RQ3E180BNTB ROHM Semiconductor 功能相似 PowerVDFN-8
场效应管(MOSFET) RQ3E180BNTB HSMT-8
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