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Model STP6N120K3

Description STMICROELECTRONICS STP6N120K3 功率场效应管, MOSFET, N沟道, 6 A, 1.2 kV, 1.95 ohm, 10 V, 4 V

Brand: ST Microelectronics

Packaging TO-220-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/number of pins:	3
Technical parameters/drain source resistance:	1.95 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	150 W
Technical parameters/threshold voltage:	4 V
Technical parameters/drain source voltage (Vds):	1.2 kV
Technical parameters/Continuous drain current (Ids):	6A
Technical parameters/Input capacitance (Ciss):	1050pF @100V(Vds)
Technical parameters/rated power (Max):	150 W
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	150W (Tc)
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-220-3
Dimensions/Length:	10.4 mm
Dimensions/Width:	4.6 mm
Dimensions/Height:	14.9 mm
Dimensions/Packaging:	TO-220-3
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Other/Manufacturing Applications:	Power Management, Power Management, Industrial, Industrial
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/12/17
Customs information/ECCN code:	EAR99

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