Technical parameters/polarity: | P-CH |
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Technical parameters/dissipated power: | 1.4 W |
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Technical parameters/drain source voltage (Vds): | 12 V |
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Technical parameters/Continuous drain current (Ids): | 5.4A |
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Technical parameters/rise time: | 5 ns |
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Technical parameters/Input capacitance (Ciss): | 483pF @6V(Vds) |
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Technical parameters/descent time: | 13 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1400 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | PICOSTAR-3 |
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Dimensions/Packaging: | PICOSTAR-3 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Supply in progress |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
CSD23280F3
|
TI | 类似代替 | PICOSTAR-3 |
CSD23280F3 12V P 沟道 FemtoFET™ MOSFET
|
||
CSD23285F5T
|
TI | 类似代替 | PICOSTAR-3 |
晶体管, MOSFET, P沟道, -5.4 A, -12 V, 0.029 ohm, -4.5 V, -650 mV
|
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