Technical parameters/frequency: | 160 MHz |
|
Technical parameters/number of pins: | 3 |
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Technical parameters/dissipated power: | 750 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 60 V |
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Technical parameters/minimum current amplification factor (hFE): | 135 @100mA, 2V |
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Technical parameters/rated power (Max): | 750 mW |
|
Technical parameters/DC current gain (hFE): | 135 |
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Technical parameters/descent time: | 0.07 µs |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 750 mW |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
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Dimensions/Length: | 5.2 mm |
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Dimensions/Width: | 4.19 mm |
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Dimensions/Height: | 5.33 mm |
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Dimensions/Packaging: | TO-226-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSD1616AYTA
|
Fairchild | 功能相似 | TO-92-3 |
NPN 晶体管，60V 至 100V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
KSD1616AYTA
|
ON Semiconductor | 功能相似 | TO-226-3 |
NPN 晶体管，60V 至 100V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
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