Technical parameters/frequency: | 160 MHz |
|
Technical parameters/rated voltage (DC): | 60.0 V |
|
Technical parameters/rated current: | 1.00 A |
|
Technical parameters/polarity: | NPN |
|
Technical parameters/dissipated power: | 750 mW |
|
Technical parameters/breakdown voltage (collector emitter): | 60 V |
|
Technical parameters/Maximum allowable collector current: | 1A |
|
Technical parameters/minimum current amplification factor (hFE): | 135 |
|
Technical parameters/maximum current amplification factor (hFE): | 600 |
|
Technical parameters/rated power (Max): | 750 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 750 mW |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-92-3 |
|
Dimensions/Length: | 5.2 mm |
|
Dimensions/Width: | 3.93 mm |
|
Dimensions/Height: | 5.33 mm |
|
Dimensions/Packaging: | TO-92-3 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
KSD1616AYTA
|
Fairchild | 功能相似 | TO-92-3 |
NPN 晶体管,60V 至 100V,Fairchild Semiconductor ### 双极晶体管,Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案,用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
KSD1616AYTA
|
ON Semiconductor | 功能相似 | TO-226-3 |
NPN 晶体管,60V 至 100V,Fairchild Semiconductor ### 双极晶体管,Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案,用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review