Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 40 V |
|
Technical parameters/Maximum allowable collector current: | 100mA |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | SOT-23 |
|
Dimensions/Packaging: | SOT-23 |
|
Other/Product Lifecycle: | Obsolete |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJV3109RMTF
|
ON Semiconductor | 功能相似 | SOT-23-3 |
开关应用(偏置电阻内置) Switching Application (Bias Resistor Built In)
|
||
FJV3111RMTF
|
Fairchild | 功能相似 | SOT-23-3 |
特性•开关电路,逆变器,接口电路,驱动器电路•内置偏置电阻(R=22KΩ)•FJV4111R的补充
|
||
FJV3111RMTF
|
ON Semiconductor | 功能相似 | SOT-23-3 |
特性•开关电路,逆变器,接口电路,驱动器电路•内置偏置电阻(R=22KΩ)•FJV4111R的补充
|
||
FJV3112RMTF
|
Fairchild | 功能相似 | SOT-23-3 |
特性•开关电路,逆变器,接口电路,驱动器电路•内置偏置电阻(R=47KΩ)•FJV4112R的补充
|
||
FJV3112RMTF
|
ON Semiconductor | 功能相似 | SOT-23 |
特性•开关电路,逆变器,接口电路,驱动器电路•内置偏置电阻(R=47KΩ)•FJV4112R的补充
|
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