Technical parameters/rated voltage (DC): 40.0 V
Technical parameters/rated current: 100 mA
Technical parameters/polarity: NPN
Technical parameters/dissipated power: 200 mW
Technical parameters/breakdown voltage (collector emitter): 40 V
Technical parameters/maximum allowable collector current: 100mA
Technical parameters/minimum current amplification factor (hFE): 100 @1mA, 5V
Technical parameters/rated power (Max): 200 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/gain bandwidth: 250 MHz
Technical parameters/dissipated power (Max): 200 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/height: 0.93 mm
External dimensions/packaging: SOT-23-3
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FJV3109R
|
Fairchild | 完全替代 | SOT-23-3 |
NPN外延硅晶体管 NPN Epitaxial Silicon Transistor
|
||
FJV3109RMTF
|
ON Semiconductor | 类似代替 | SOT-23-3 |
开关应用（偏置电阻内置） Switching Application (Bias Resistor Built In)
|
||
FJV3112RMTF
|
Fairchild | 完全替代 | SOT-23-3 |
特性•开关电路，逆变器，接口电路，驱动器电路•内置偏置电阻（R=47KΩ）•FJV4112R的补充
|
||
FJV3112RMTF
|
ON Semiconductor | 完全替代 | SOT-23 |
特性•开关电路，逆变器，接口电路，驱动器电路•内置偏置电阻（R=47KΩ）•FJV4112R的补充
|
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