Technical parameters/rated power: | 2 W |
|
Technical parameters/polarity: | P-CH |
|
Technical parameters/dissipated power: | 3.1 W |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/Continuous drain current (Ids): | 12A |
|
Technical parameters/Input capacitance (Ciss): | 2600pF @15V(Vds) |
|
Technical parameters/rated power (Max): | 3.1 W |
|
Technical parameters/dissipated power (Max): | 3.1W (Ta) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Packaging: | SOIC-8 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS4435
|
ON Semiconductor | 功能相似 | SOIC-8 |
P沟道逻辑电平的PowerTrench ? MOSFET P-Channel Logic Level PowerTrench⑩MOSFET
|
||
FDS4435
|
National Semiconductor | 功能相似 | SOIC |
P沟道逻辑电平的PowerTrench ? MOSFET P-Channel Logic Level PowerTrench⑩MOSFET
|
||
FDS4435
|
Fairchild | 功能相似 | SOIC-8 |
P沟道逻辑电平的PowerTrench ? MOSFET P-Channel Logic Level PowerTrench⑩MOSFET
|
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