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Model FDS4435
Description MOSFET P-CH 30V 8.8A 8-SOIC
Product QR code
Brand: ON Semiconductor
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0.18  yuan 0.18yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9964) Minimum order quantity(1)
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Technical parameters/dissipated power:

2.5W (Ta)

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/rise time:

13.5 ns

 

Technical parameters/Input capacitance (Ciss):

1604pF @15V(Vds)

 

Technical parameters/descent time:

25 ns

 

Technical parameters/operating temperature (Max):

175 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2.5W (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 175℃ (TJ)

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

lead-free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
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P沟道30V - 0.016ohm - 7A SO- 8 STripFET⑩ II功率MOSFET P-CHANNEL 30V - 0.016ohm - 7A SO-8 STripFET⑩ II POWER MOSFET
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