Technical parameters/rated voltage (DC): | 55.0 V |
|
Technical parameters/rated current: | 17.0 A |
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Technical parameters/drain source resistance: | 65 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 45 W |
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Technical parameters/product series: | IRLR024N |
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Technical parameters/drain source voltage (Vds): | 55 V |
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Technical parameters/Leakage source breakdown voltage: | 55.0V (min) |
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Technical parameters/Continuous drain current (Ids): | 17.0 A |
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Technical parameters/rise time: | 74.0 ns |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | DPAK-252 |
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Dimensions/Packaging: | DPAK-252 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | Non-Compliant |
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Compliant with standards/lead standards: | Contains Lead |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD12NF06LT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
STMICROELECTRONICS STD12NF06LT4 晶体管, MOSFET, N沟道, 12 A, 60 V, 80 mohm, 10 V, 3 V
|
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