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Model IRFP048NPBF

Description N沟道,55V,64A,16mΩ@10V

Brand: International Rectifier

Packaging TO-247-3

Delivery time

Packaging method Tube

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	55.0 V
Technical parameters/rated current:	64.0 A
Technical parameters/drain source resistance:	0.016 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	140 W
Technical parameters/product series:	IRFP048N
Technical parameters/threshold voltage:	4 V
Technical parameters/Input capacitance:	1900pF @25V
Technical parameters/drain source voltage (Vds):	55 V
Technical parameters/Leakage source breakdown voltage:	55 V
Technical parameters/Continuous drain current (Ids):	64.0 A
Technical parameters/rise time:	78.0 ns
Technical parameters/Input capacitance (Ciss):	1900pF @25V(Vds)
Technical parameters/rated power (Max):	140 W
Technical parameters/operating temperature (Max):	175 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	TO-247-3
Dimensions/Length:	15.87 mm
Dimensions/Height:	20.7 mm
Dimensions/Packaging:	TO-247-3
Physical parameters/operating temperature:	-55℃ ~ 175℃
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tube
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2014/12/17

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
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IRFP048	Infineon	功能相似		Power Field-Effect Transistor, 64A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3	PDF
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