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Specification parameters
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Technical parameters/rated voltage (DC):

-20.0 V

Technical parameters/rated current:

-4.50 A

Technical parameters/number of pins:

Technical parameters/drain source resistance:

0.039 Ω

Technical parameters/polarity:

P-Channel

Technical parameters/dissipated power:

1.6 W

Technical parameters/threshold voltage:

1 V

Technical parameters/Input capacitance:

890 pF

Technical parameters/gate charge:

9.00 nC

Technical parameters/drain source voltage (Vds):

20 V

Technical parameters/breakdown voltage of gate source:

±12.0 V

Technical parameters/Continuous drain current (Ids):

4.50 mA

Technical parameters/rise time:

9 ns

Technical parameters/Input capacitance (Ciss):

890pF @10V(Vds)

Technical parameters/rated power (Max):

800 mW

Technical parameters/descent time:

13 ns

Technical parameters/operating temperature (Max):

150 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

1.6W (Ta)

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

TSOT-23-6

Dimensions/Length:

3 mm

Dimensions/Width:

1.7 mm

Dimensions/Height:

1 mm

Dimensions/Packaging:

TSOT-23-6

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

Other/Product Lifecycle:

Active

Other/Packaging Methods:

Tape & Reel (TR)

Compliant with standard

Alternative material

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FDC640P_F095	Fairchild	类似代替	TSOT-23-6	MOSFET P-CH 20V 4.5A 6-SSOT	PDF
SI3469DV-T1-E3	VISHAY	功能相似	TSOP-6	Trans MOSFET P-CH 20V 5A 6Pin TSOP T/R	PDF
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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643