Technical parameters/power supply voltage (DC): | 5.00 V, 5.50 V (max) |
|
Technical parameters/clock frequency: | 100 GHz |
|
Technical parameters/access time: | 100 ns |
|
Technical parameters/memory capacity: | 4000000 B |
|
Technical parameters/power supply voltage: | 4.5V ~ 5.5V |
|
Encapsulation parameters/installation method: | Through Hole |
|
Package parameters/number of pins: | 32 |
|
Encapsulation parameters/Encapsulation: | DIP-32 |
|
Dimensions/Packaging: | DIP-32 |
|
Physical parameters/operating temperature: | -40℃ ~ 85℃ (TA) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tube, Rail |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Maxim Integrated | 类似代替 | DIP-32 |
Ic Nvsram 4096Kbit 100ns 32dip - Ds1250ab-100ind+
|
||
DS1250Y-100+
|
Maxim Integrated | 类似代替 | DIP-32 |
MAXIM INTEGRATED PRODUCTS DS1250Y-100+ 芯片, 存储器, NVRAM
|
||
|
|
Maxim Integrated | 完全替代 | DIP-32 |
IC NVSRAM 4Mbit 100NS 32EDIP
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review