Technical parameters/power supply voltage (DC): 5.00 V, 5.50 V (max)
Technical parameters/number of pins: 32
Technical parameters/clock frequency: 100 GHz
Technical parameters/access time: 100 ns
Technical parameters/memory capacity: 500000 B
Technical parameters/operating temperature (Max): 70 ℃
Technical parameters/operating temperature (Min): 0 ℃
Technical parameters/power supply voltage: 4.5V ~ 5.5V
Technical parameters/power supply voltage (Max): 5.5 V
Technical parameters/power supply voltage (Min): 4.5 V
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 32
Encapsulation parameters/Encapsulation: DIP-32
External dimensions/length: 43.69 mm
External dimensions/width: 18.8 mm
External dimensions/height: 9.4 mm
External dimensions/packaging: DIP-32
Physical parameters/operating temperature: 0℃ ~ 70℃ (TA)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Each
Other/Manufacturing Applications: Embedded Design & Development, Embedded Design and Development
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DS1250AB-100IND+
|
Maxim Integrated | 类似代替 | DIP-32 |
Ic Nvsram 4096Kbit 100ns 32dip - Ds1250ab-100ind+
|
||
DS1250Y-100
|
Maxim Integrated | 完全替代 | EDIP-32 |
IC NVSRAM 4Mbit 100NS 32DIP
|
||
DS1250Y-70+
|
Maxim Integrated | 类似代替 | EDIP-32 |
MAXIM INTEGRATED PRODUCTS DS1250Y-70+ 芯片, 存储器, NVRAM
|
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