Technical parameters/breakdown voltage (collector emitter): | 60 V |
|
Technical parameters/minimum current amplification factor (hFE): | 100 @150mA, 10V |
|
Technical parameters/rated power (Max): | 400 mW |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 400 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 14 |
|
Encapsulation parameters/Encapsulation: | Flatpack-14 |
|
Dimensions/Packaging: | Flatpack-14 |
|
Physical parameters/materials: | Silicon |
|
Physical parameters/operating temperature: | -65℃ ~ 200℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Semicoa Semiconductor | 完全替代 | FPAK |
多个( QUAD ) PNP硅开关晶体管 MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR
|
||
2N6988
|
Microsemi | 完全替代 | Flatpack-14 |
多个( QUAD ) PNP硅开关晶体管 MULTIPLE (QUAD) PNP SILICON SWITCHING TRANSISTOR
|
||
|
|
Microsemi | 完全替代 | FPAK |
Trans GP BJT PNP 60V 0.6A 14Pin FPAK
|
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