Technical parameters/polarity: | NPN |
|
Technical parameters/breakdown voltage (collector emitter): | 50 V |
|
Technical parameters/Maximum allowable collector current: | 3A |
|
Technical parameters/minimum current amplification factor (hFE): | 30 @1.5A, 2V |
|
Technical parameters/rated power (Max): | 1 W |
|
Encapsulation parameters/installation method: | Through Hole |
|
Encapsulation parameters/Encapsulation: | TO-205 |
|
Dimensions/Packaging: | TO-205 |
|
Physical parameters/operating temperature: | -65℃ ~ 200℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Motorola | 类似代替 | TO-39-3 |
NPN型中功率硅晶体管 NPN MEDIUM POWER SILICON TRANSISTOR
|
||
2N3507
|
Central Semiconductor | 类似代替 | TO-39 |
NPN型中功率硅晶体管 NPN MEDIUM POWER SILICON TRANSISTOR
|
||
|
|
Microchip | 完全替代 | Bulk |
TO-39 NPN 50V 3A
|
||
|
|
Motorola | 完全替代 | TO-39 |
TO-39 NPN 50V 3A
|
||
JAN2N3507
|
Microsemi | 完全替代 | TO-205 |
TO-39 NPN 50V 3A
|
||
JAN2N3507
|
Semicoa Semiconductor | 完全替代 | TO-39 |
TO-39 NPN 50V 3A
|
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