Technical parameters/polarity: | N-CH |
|
Technical parameters/dissipated power: | 800mW (Ta), 15W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 100 V |
|
Technical parameters/Continuous drain current (Ids): | 3.5A |
|
Technical parameters/dissipated power (Max): | 800mW (Ta), 15W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | ULCC-18 |
|
Dimensions/Packaging: | ULCC-18 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTX2N6782U
|
Infineon | 功能相似 | LLCC |
MOSFET
|
||
JANTX2N6782U
|
IRF | 功能相似 |
MOSFET
|
|||
JANTXV2N6782U
|
International Rectifier | 功能相似 | Surface Mount |
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
|
||
JANTXV2N6782U
|
Microsemi | 功能相似 | ULCC-18 |
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
|
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