Technical parameters/rise time: 25 ns
Technical parameters/Input capacitance (Ciss): 190pF @25V(Vds)
Technical parameters/descent time: 20 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 15000 mW
Package parameters/number of pins: 18
Encapsulation parameters/Encapsulation: LLCC
External dimensions/packaging: LLCC
Physical parameters/operating temperature: -55℃ ~ 125℃
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRFE110PBF
|
Infineon | 功能相似 | LLCC |
LLCC N-CH 100V 3.5A
|
||
JANTXV2N6782U
|
International Rectifier | 功能相似 | Surface Mount |
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
|
||
JANTXV2N6782U
|
Microsemi | 功能相似 | ULCC-18 |
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, LCC-18
|
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