Technical parameters/rated power: | 1.3 W |
|
Technical parameters/number of channels: | 1 |
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Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 65 mΩ |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 1.3 W |
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Technical parameters/threshold voltage: | 550 mV |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Leakage source breakdown voltage: | 20 V |
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Technical parameters/Continuous drain current (Ids): | 3.7A |
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Technical parameters/rise time: | 48 ns |
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Technical parameters/Input capacitance (Ciss): | 633pF @10V(Vds) |
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Technical parameters/descent time: | 381 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1.3W (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Length: | 3.04 mm |
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Dimensions/Width: | 1.4 mm |
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Dimensions/Height: | 1.02 mm |
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Dimensions/Packaging: | SOT-23-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLML6402PBF
|
Infineon | 功能相似 | SOT-23 |
INFINEON IRLML6402PBF 晶体管, MOSFET, P沟道, -3.7 A, -20 V, 65 mohm, -4.5 V, -550 mV
|
||
IRLML6402TRPBF
|
International Rectifier | 类似代替 | SOT-23-3 |
INFINEON IRLML6402TRPBF 场效应管, MOSFET, P沟道, -20V, -3.7A, SOT-23
|
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