Chip AI consultant
Technical parameters/number of pins: | 3 |
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Technical parameters/drain source resistance: | 0.065 Ω |
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Technical parameters/polarity: | P-CH |
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Technical parameters/dissipated power: | 1.3 W |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Continuous drain current (Ids): | 3.7A |
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Technical parameters/rise time: | 48 ns |
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Technical parameters/Input capacitance (Ciss): | 633pF @10V(Vds) |
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Technical parameters/descent time: | 381 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 1300 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23 |
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Dimensions/Packaging: | SOT-23 |
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Physical parameters/materials: | Silicon |
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Other/Product Lifecycle: | Active |
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Other/Manufacturing Applications: | Power Management, Consumer Electronics, Industrial, Power Management, Portable Equipment, Portable Devices, Consumer Electronics, Industrial |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standard/REACH SVHC version: | 2015/12/17 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRLML6402TRPBF
|
International Rectifier | 功能相似 | SOT-23-3 |
INFINEON IRLML6402TRPBF 场效应管, MOSFET, P沟道, -20V, -3.7A, SOT-23
|
||
NTR4101PT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR NTR4101PT1G 晶体管, MOSFET, P沟道, 3.2 A, -20 V, 0.07 ohm, -4.5 V, -720 mV
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