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Model FDR838P

Description P沟道2.5V指定PowerTrenchTM MOSFET P-Channel 2.5V Specified PowerTrenchTM MOSFET

Brand: Fairchild

Packaging SMD-8

Delivery time

Packaging method Tape

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	-20.0 V
Technical parameters/rated current:	-8.00 A
Technical parameters/drain source resistance:	17.0 mΩ
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	1.8W (Ta)
Technical parameters/Input capacitance:	3.30 nF
Technical parameters/gate charge:	30.0 nC
Technical parameters/drain source voltage (Vds):	20 V
Technical parameters/Leakage source breakdown voltage:	-200 V
Technical parameters/breakdown voltage of gate source:	±8.00 V
Technical parameters/Continuous drain current (Ids):	8.00 A
Technical parameters/rise time:	20.0 ns
Technical parameters/Input capacitance (Ciss):	3300pF @10V(Vds)
Technical parameters/dissipated power (Max):	1.8W (Ta)
Encapsulation parameters/installation method:	Surface Mount
Encapsulation parameters/Encapsulation:	SMD-8
Dimensions/Packaging:	SMD-8
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Unknown
Other/Packaging Methods:	Tape
Compliant with standards/RoHS standards:	Non-Compliant
Compliant with standards/lead standards:	Lead Free
Customs information/ECCN code:	EAR99

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