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Description ON Semiconductor PowerTrench 系列 Si N沟道 MOSFET FDMS7678, 17.5 A, Vds=30 V, 8引脚 Power 56封装
Product QR code
Packaging QFN
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
2.48  yuan 2.48yuan
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  • Quantity
    Inventory(8722) Minimum order quantity(1)
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Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.0047 Ω

 

Technical parameters/dissipated power:

41 W

 

Technical parameters/threshold voltage:

1.5 V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/rise time:

4 ns

 

Technical parameters/Input capacitance (Ciss):

1810pF @15V(Vds)

 

Technical parameters/descent time:

3 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

41 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

QFN

 

Dimensions/Length:

5.1 mm

 

Dimensions/Width:

6.25 mm

 

Dimensions/Height:

1.05 mm

 

Dimensions/Packaging:

QFN

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Product Lifecycle:

Active

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSC057N03MS G BSC057N03MS G Infineon 功能相似 PG-TSDSON
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