Technical parameters/drain source resistance: | 0.0048 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 45 W |
|
Technical parameters/threshold voltage: | 1 V |
|
Technical parameters/drain source voltage (Vds): | 30 V |
|
Technical parameters/rise time: | 6.6 ns |
|
Technical parameters/Input capacitance (Ciss): | 2300pF @15V(Vds) |
|
Technical parameters/rated power (Max): | 45 W |
|
Technical parameters/descent time: | 6.8 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 45 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | PG-TSDSON |
|
Dimensions/Length: | 5.35 mm |
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Dimensions/Width: | 6.1 mm |
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Dimensions/Height: | 1.1 mm |
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Dimensions/Packaging: | PG-TSDSON |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Onboard charger, VRD/VRM, Mainboard |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
Compliant with the REACH SVHC standard: | No SVHC |
|
Compliant with standard/REACH SVHC version: | 2015/12/17 |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDMS7678
|
ON Semiconductor | 功能相似 | QFN |
FAIRCHILD SEMICONDUCTOR FDMS7678 晶体管, MOSFET, N沟道, 26 A, 30 V, 0.0047 ohm, 10 V, 1.5 V
|
||
FDMS7678
|
Fairchild | 功能相似 | Power-56-8 |
FAIRCHILD SEMICONDUCTOR FDMS7678 晶体管, MOSFET, N沟道, 26 A, 30 V, 0.0047 ohm, 10 V, 1.5 V
|
||
SIR468DP-T1-GE3
|
VISHAY | 功能相似 | SOIC-8 |
VISHAY SIR468DP-T1-GE3 场效应管, MOSFET, N通道, 30V, 40A, SOIC, 整卷
|
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