Technical parameters/frequency: | 440 MHz |
|
Technical parameters/output power: | 210 W |
|
Technical parameters/gain: | 21 dB |
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Technical parameters/test current: | 2 mA |
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Technical parameters/rated voltage: | 65 V |
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Technical parameters/power supply voltage: | 28 V |
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Encapsulation parameters/Encapsulation: | SOT-1204-2 |
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Dimensions/Packaging: | SOT-1204-2 |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLP8G05S-200Y
|
NXP | 功能相似 |
RF Power Transistor, 0.40 to 0.5GHz, 200W, 21dB, 28V, SOT1138-2, LDMOS
|
|||
BLP8G05S-200Y
|
Ampleon USA | 功能相似 | SOT-1138-2 |
RF Power Transistor, 0.40 to 0.5GHz, 200W, 21dB, 28V, SOT1138-2, LDMOS
|
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