Technical parameters/frequency: 440 MHz
Technical parameters/output power: 200 W
Technical parameters/gain: 21 dB
Technical parameters/test current: 2 mA
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Technical parameters/rated voltage: 65 V
Technical parameters/power supply voltage: 28 V
Encapsulation parameters/Encapsulation: SOT-1138-2
External dimensions/packaging: SOT-1138-2
Physical parameters/operating temperature: -65℃ ~ 225℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLP8G05S-200Y
|
NXP | 功能相似 |
RF Power Transistor, 0.40 to 0.5GHz, 200W, 21dB, 28V, SOT1138-2, LDMOS
|
|||
BLP8G05S-200Y
|
Ampleon USA | 功能相似 | SOT-1138-2 |
RF Power Transistor, 0.40 to 0.5GHz, 200W, 21dB, 28V, SOT1138-2, LDMOS
|
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