Technical parameters/frequency: | 871.5 MHz |
|
Technical parameters/rated current: | 49 A |
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Technical parameters/drain source resistance: | 60 mΩ |
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Technical parameters/Leakage source breakdown voltage: | 65 V |
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Technical parameters/output power: | 40 W |
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Technical parameters/gain: | 20.2 dB |
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Technical parameters/test current: | 1.4 A |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | 65 ℃ |
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Technical parameters/rated voltage: | 65 V |
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Encapsulation parameters/installation method: | Surface Mount |
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Encapsulation parameters/Encapsulation: | SOT-502 |
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Dimensions/Length: | 20.7 mm |
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Dimensions/Width: | 9.91 mm |
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Dimensions/Height: | 4.72 mm |
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Dimensions/Packaging: | SOT-502 |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLF6G10LS-200,112
|
NXP | 完全替代 | SOT-502 |
IC BASESTATION FINAL SOT502B
|
||
|
|
Ampleon USA | 完全替代 |
IC BASESTATION FINAL SOT502B
|
|||
BLF6G10LS-200R,118
|
Ampleon USA | 功能相似 | SOT-502 |
Trans RF MOSFET N-CH 65V 49A 3Pin SOT-502B T/R
|
||
BLF6G10LS-200RN
|
NXP | 功能相似 | SOT-502 |
功率LDMOS晶体管 Power LDMOS transistor
|
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