Technical parameters/frequency: 871.5 MHz
Technical parameters/output power: 40 W
Technical parameters/gain: 20.2 dB
Technical parameters/test current: 1.4 A
Technical parameters/rated voltage: 65 V
Encapsulation parameters/Encapsulation: SOT-502
External dimensions/packaging: SOT-502
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLF6G10LS-200,112
|
NXP | 完全替代 | SOT-502 |
IC BASESTATION FINAL SOT502B
|
||
|
|
Ampleon USA | 完全替代 |
IC BASESTATION FINAL SOT502B
|
|||
BLF6G10LS-200R,118
|
Ampleon USA | 功能相似 | SOT-502 |
Trans RF MOSFET N-CH 65V 49A 3Pin SOT-502B T/R
|
||
BLF6G10LS-200RN
|
NXP | 功能相似 | SOT-502 |
功率LDMOS晶体管 Power LDMOS transistor
|
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