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Model IPD06N03LBG
Description OptiMOS®2功率三极管 OptiMOS㈢2 Power-Transistor
Product QR code
Brand: Infineon
Packaging TO-252
Delivery time
Packaging method Cut Tape (CT)
Standard packaging quantity 1
5.76  yuan 5.76yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7279) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

30.0 V

 

Technical parameters/rated current:

50.0 A

 

Technical parameters/Input capacitance:

2.80 nF

 

Technical parameters/gate charge:

22.0 nC

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Continuous drain current (Ids):

50.0 A

 

Technical parameters/Input capacitance (Ciss):

2800pF @15V(Vds)

 

Technical parameters/rated power (Max):

83 W

 

Encapsulation parameters/installation method:

Surface Mount

 

Encapsulation parameters/Encapsulation:

TO-252

 

Dimensions/Packaging:

TO-252

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Cut Tape (CT)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
STD6N95K5 STD6N95K5 ST Microelectronics 功能相似 TO-252-3
STMICROELECTRONICS STD6N95K5 功率场效应管, MOSFET, N沟道, 9 A, 950 V, 1 ohm, 10 V, 4 V
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