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Model FQB5N20LTM
Description Trans MOSFET N-CH 200V 4.5A 3Pin(2+Tab) D2PAK T/R
Product QR code
Brand: Fairchild
Packaging TO-263-3
Delivery time
Packaging method Tape
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(3549) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

200 V

 

Technical parameters/rated current:

4.50 A

 

Technical parameters/drain source resistance:

940 mΩ

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

3.13W (Ta), 52W (Tc)

 

Technical parameters/drain source voltage (Vds):

200 V

 

Technical parameters/Leakage source breakdown voltage:

200 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

4.50 A

 

Technical parameters/Input capacitance (Ciss):

325pF @25V(Vds)

 

Technical parameters/dissipated power (Max):

3.13W (Ta), 52W (Tc)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

TO-263-3

 

Dimensions/Packaging:

TO-263-3

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Customs information/ECCN code:

EAR99

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
BSP297 BSP297 Siemens Semiconductor 功能相似 SOT-223
INFINEON BSP297 晶体管, MOSFET, N沟道, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V
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BSP297 BSP297 Siemens AG 功能相似
INFINEON BSP297 晶体管, MOSFET, N沟道, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V
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BSP297 BSP297 Infineon 功能相似 SOT-223
INFINEON BSP297 晶体管, MOSFET, N沟道, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V
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FQD4N20TM FQD4N20TM Fairchild 功能相似 TO-252-3
Trans MOSFET N-CH 200V 3A 3Pin(2+Tab) DPAK T/R
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