Technical parameters/rated voltage (DC): | 200 V |
|
Technical parameters/rated current: | 3.60 A |
|
Technical parameters/drain source resistance: | 1.40 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 3.13W (Ta), 45W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 200 V |
|
Technical parameters/Leakage source breakdown voltage: | 200 V |
|
Technical parameters/breakdown voltage of gate source: | ±30.0 V |
|
Technical parameters/Continuous drain current (Ids): | 3.60 A |
|
Technical parameters/Input capacitance (Ciss): | 220pF @25V(Vds) |
|
Technical parameters/rated power (Max): | 3.13 W |
|
Technical parameters/dissipated power (Max): | 3.13W (Ta), 45W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Packaging: | TO-263-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Siemens Semiconductor | 功能相似 | SOT-223 |
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BSP297
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Infineon | 功能相似 | SOT-223 |
INFINEON BSP297 晶体管, MOSFET, N沟道, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V
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NXP | 功能相似 | DPAK |
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