Technical parameters/dissipated power: | 500 mW |
|
Encapsulation parameters/Encapsulation: | DO-35 |
|
Dimensions/Packaging: | DO-35 |
|
Other/Product Lifecycle: | Active |
|
Other/Minimum Packaging: | 5000 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5227B
|
Multicomp | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5227B. 齐纳二极管
|
||
|
|
CHENG-YI | 类似代替 |
FAIRCHILD SEMICONDUCTOR 1N5227B. 齐纳二极管
|
|||
1N5227B
|
先科ST | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5227B. 齐纳二极管
|
||
1N5227B
|
Motorola | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR 1N5227B. 齐纳二极管
|
||
BZX79C3V6
|
EIC | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX79C3V6 单管二极管 齐纳, 3.6 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
||
BZX79C3V6
|
ON Semiconductor | 类似代替 | DO-35 |
FAIRCHILD SEMICONDUCTOR BZX79C3V6 单管二极管 齐纳, 3.6 V, 500 mW, DO-35, 5 %, 2 引脚, 200 °C
|
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