Technical parameters/breakdown voltage (collector emitter): | 75 V |
|
Technical parameters/gain: | 9 dB |
|
Technical parameters/minimum current amplification factor (hFE): | 40 @1.5A, 5V |
|
Technical parameters/rated power (Max): | 80 W |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Technical parameters/dissipated power (Max): | 80000 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-422 |
|
Dimensions/Packaging: | SOT-422 |
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Physical parameters/materials: | Silicon |
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Other/Product Lifecycle: | Obsolete |
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Other/Packaging Methods: | Tray |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BLS2731-50
|
NXP | 功能相似 | SOT422A |
微波功率晶体管 Microwave power transistor
|
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