Encapsulation parameters/Encapsulation: | TO-261 |
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Dimensions/Packaging: | TO-261 |
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Other/collector base reverse breakdown voltage V (BR) CBOCollector Base Voltage (VCBO): | -100V |
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Other/collector emitter reverse breakdown voltage V (BR) CEOCluster Emiter Voltage (VCEO): | -80V |
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Other/collector continuous output current ICCollector Current (IC): | -1.5A |
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Other/Cut off Frequency fTTransmission Frequency (fT): | 50MHz |
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Other/DC current gain hFEDC Current Gain (hFE): | 100~250 |
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Other/Tube Pressure Drop VCE (sat) Collector Hermit Saturation Voltage: | -500mV/-0.5V |
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Other/dissipated power PcPoWer Dissipation: | 1.5W |
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Other/Specification PDF: | __ |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP53-16,115
|
NXP | 功能相似 | TO-261-4 |
Nexperia BCP53-16,115 , PNP 晶体管, 1 A, Vce=80 V, HFE:100, 145 MHz, 4引脚 SOT-223 (SC-73)封装
|
||
BCP53-16,135
|
NXP | 功能相似 | TO-261-4 |
SC-73 PNP 80V 1A
|
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BCP53-16T/R
|
NXP | 类似代替 | SOT-223 |
Trans GP BJT PNP 80V 1A Automotive 4Pin(3+Tab) SC-73 T/R
|
||
|
|
Motorola | 功能相似 |
ON SEMICONDUCTOR BCP53-16T1G 单晶体管 双极, 通用, PNP, -80 V, 50 MHz, 1.5 W, -1.5 A, 100 hFE
|
|||
BCP53-16T1G
|
ON Semiconductor | 功能相似 | SOT-223 |
ON SEMICONDUCTOR BCP53-16T1G 单晶体管 双极, 通用, PNP, -80 V, 50 MHz, 1.5 W, -1.5 A, 100 hFE
|
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