Technical parameters/frequency: 145 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 1.35 W
Technical parameters/breakdown voltage (collector emitter): 80 V
Technical parameters/maximum allowable collector current: 1A
Technical parameters/minimum current amplification factor (hFE): 100 @150mA, 2V
Technical parameters/rated power (Max): 1 W
Technical parameters/DC current gain (hFE): 100
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 1350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 4
Encapsulation parameters/Encapsulation: TO-261-4
External dimensions/height: 1.7 mm
External dimensions/packaging: TO-261-4
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2015/12/17
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BCP53-16,115
|
NXP | 类似代替 | TO-261-4 |
NXP BCP53-16,115 单晶体管 双极, PNP, -80 V, 145 MHz, 650 mW, -1 A, 100 hFE
|
||
BCP53-16T/R
|
NXP | 类似代替 | SOT-223 |
Trans GP BJT PNP 80V 1A Automotive 4Pin(3+Tab) SC-73 T/R
|
||
BCP53T1G
|
ON Semiconductor | 功能相似 | SOT-223 |
ON SEMICONDUCTOR BCP53T1G 单晶体管 双极, 通用, PNP, -80 V, 50 MHz, 1.5 W, -1.5 A, 250 hFE
|
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