Technical parameters/rated current: | -50.0 mA |
|
Technical parameters/breakdown voltage: | 30.0 V |
|
Technical parameters/drain source resistance: | 75.0 Ω |
|
Technical parameters/polarity: | P-Channel |
|
Technical parameters/dissipated power: | 500 mW |
|
Technical parameters/breakdown voltage of gate source: | 30.0 V |
|
Technical parameters/Continuous drain current (Ids): | -90.0 mA |
|
Technical parameters/operating temperature (Max): | 200 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 500 mW |
|
Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-18 |
|
Dimensions/Height: | 5.33 mm |
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Dimensions/Packaging: | TO-18 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JANTX2N5114
|
Solitron Devices | 类似代替 | TO-18 |
JAN QPL LOW POWER FIELD EFFECT TRANSISTORS
|
||
JANTXV2N5116
|
Solitron Devices | 类似代替 |
Trans JFET P-CH
|
|||
JANTXV2N5116
|
Microsemi | 类似代替 | TO-18 |
Trans JFET P-CH
|
||
PMBFJ174,215
|
NXP | 功能相似 | SOT-23-3 |
NXP PMBFJ174,215 晶体管, JFET, JFET, 30 V, 20 mA, 135 mA, 10 V, SOT-23, JFET
|
||
PMBFJ176
|
NXP | 功能相似 | SOT-23 |
P-channel silicon field-effect transistors
|
||
|
|
Philips | 功能相似 |
P-channel silicon field-effect transistors
|
|||
PMBFJ177
|
NXP | 功能相似 | SOT-23-3 |
P-channel silicon field-effect transistors
|
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