Technical parameters/breakdown voltage (collector emitter): | 80 V |
|
Technical parameters/minimum current amplification factor (hFE): | 20 @4A, 4V |
|
Technical parameters/rated power (Max): | 150 W |
|
Encapsulation parameters/installation method: | Through Hole |
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Encapsulation parameters/Encapsulation: | TO-3 |
|
Dimensions/Packaging: | TO-3 |
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Physical parameters/operating temperature: | -65℃ ~ 200℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Microsemi | 类似代替 | TO-3 |
Bipolar Transistors - BJT NPN Transistor
|
||
2N5877
|
Microchip | 类似代替 |
Bipolar Transistors - BJT NPN Transistor
|
|||
2N5877
|
ETC | 类似代替 |
Bipolar Transistors - BJT NPN Transistor
|
|||
2N6673
|
Microchip | 类似代替 |
Trans GP BJT NPN 400V 8A 3Pin(2+Tab) TO-3
|
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