Technical parameters/rated voltage (DC): | -40.0 V |
|
Technical parameters/rated current: | -600 mA |
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Technical parameters/polarity: | PNP |
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Technical parameters/breakdown voltage (collector emitter): | 40 V |
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Technical parameters/Maximum allowable collector current: | 0.6A |
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Technical parameters/minimum current amplification factor (hFE): | 100 @150mA, 2V |
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Technical parameters/rated power (Max): | 625 mW |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 625 mW |
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Encapsulation parameters/installation method: | Through Hole |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-226-3 |
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Dimensions/Packaging: | TO-226-3 |
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Physical parameters/materials: | Silicon |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Box (TB) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N4403TA
|
Fairchild | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N4403TA 单晶体管 双极, PNP, -40 V, 200 MHz, 625 mW, -600 mA, 20 hFE
|
||
2N4403TA
|
ON Semiconductor | 类似代替 | TO-92-3 |
FAIRCHILD SEMICONDUCTOR 2N4403TA 单晶体管 双极, PNP, -40 V, 200 MHz, 625 mW, -600 mA, 20 hFE
|
||
2N4403TAR
|
Fairchild | 完全替代 | TO-226-3 |
PNP 晶体管，40 至 50V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
2N4403TF
|
Fairchild | 类似代替 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Transistor General Purpose
|
||
2N4403TF
|
ON Semiconductor | 类似代替 | TO-92-3 |
双极晶体管 - 双极结型晶体管(BJT) PNP Transistor General Purpose
|
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